THE INFLUENCE OF AMMONIA ON RAPID-THERMAL LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITED TINX FILMS FROM TETRAKIS (DIMETHYLAMIDO) TITANIUM PRECURSOR ONTO INP

被引:35
作者
KATZ, A
FEINGOLD, A
NAKAHARA, S
PEARTON, SJ
LANE, E
GEVA, M
STEVIE, FA
JONES, K
机构
[1] AT&T BELL LABS, BREINIGSVILLE, PA 18031 USA
[2] AT&T BELL LABS, ALLENTOWN, PA 18103 USA
[3] UNIV FLORIDA, GAINESVILLE, FL 32611 USA
关键词
D O I
10.1063/1.351271
中图分类号
O59 [应用物理学];
学科分类号
摘要
The process kinetics, chemical composition, morphology, microstructures, and stress of rapid-thermal low pressure metalorganic chemical vapor deposited (RT-LPMOCVD) TiN(x) films on InP, using a combined reactive chemistry of ammonia (NH3) gas and tetrakis (dimethylamido) titanium (DMATi) liquid precursors, were studied. Enhanced deposition rates of 1-3 nm s-1 at total chamber pressures in the range of 3-10 Torr and temperatures of 300-degrees-C-350-degrees-C at a NH3:DMATi flow rate ratio of 1:8 to 1:15 were achieved. Stoichiometric film compositions were obtained, with carbon and oxygen impurity concentrations as low as 5%. Transmission electron microscopy analysis identified the deposited films as TiN with some epitaxial relationship to the underlying (001) InP substrate. This process provides a superior film to the preview RT-LPMOCVD TiN(x) film deposited using only the DMATi precursor.
引用
收藏
页码:993 / 1000
页数:8
相关论文
共 19 条
[1]   STUDY OF THE FORMATION OF A SIGMA,PI-VINYL LIGAND BY HYDROGEN-ATOM TRANSFER FROM A COORDINATED DIMETHYLAMIDE TO A PERPENDICULARLY BONDED ETHYNE LIGAND - PREPARATION AND CHARACTERIZATION OF (PME2PH)CL2W(MU-NME2)-(MU-ETA-1,ETA-2-CHCH2)(MU-ETA-2,ETA-1-CH2NME)WCL(NME2)(PME2PH) [J].
AHMED, KJ ;
CHISHOLM, MH ;
FOLTING, K ;
HUFFMAN, JC .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1986, 108 (05) :989-999
[2]   PLASMA-ETCHING OF III-V SEMICONDUCTORS IN CH4/H2/AR ELECTRON-CYCLOTRON RESONANCE DISCHARGES [J].
CONSTANTINE, C ;
JOHNSON, D ;
PEARTON, SJ ;
CHAKRABARTI, UK ;
EMERSON, AB ;
HOBSON, WS ;
KINSELLA, AP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :596-606
[3]  
FIX RM, 1990, MATER RES SOC SYMP P, V168, P357
[4]  
GUPTA S, 1989, SEMICOND INT, V80, P1
[5]   CHARACTERIZATION OF CVD-TIN FILMS PREPARED WITH METALORGANIC SOURCE [J].
ISHIHARA, K ;
YAMAZAKI, K ;
HAMADA, H ;
KAMISAKO, K ;
TARUI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (10) :2103-2105
[6]   NOVEL SELF-ALIGNED W/TIN/TISI2 CONTACT STRUCTURE FOR VERY SHALLOW JUNCTIONS AND INTERCONNECTIONS [J].
JOSHI, RV ;
MOY, D ;
BRODSKY, S ;
CHARAI, A ;
KRUSINELBAUM, L ;
RESTLE, PJ ;
NGUYEN, TN ;
OH, CS .
APPLIED PHYSICS LETTERS, 1989, 54 (17) :1672-1674
[7]   NOVEL SUBMICROMETER MOS DEVICES BY SELF-ALIGNED NITRIDATION OF SILICIDE [J].
KANEKO, H ;
KOYANAGI, M ;
SHIMIZU, S ;
KUBOTA, Y ;
KISHINO, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) :1702-1709
[8]   PROPERTIES OF TITANIUM NITRIDE THIN-FILMS DEPOSITED BY RAPID-THERMAL-LOW-PRESSURE-METALORGANIC-CHEMICAL-VAPOR-DEPOSITION TECHNIQUE USING TETRAKIS (DIMETHYLAMIDO) TITANIUM PRECURSOR [J].
KATZ, A ;
FEINGOLD, A ;
PEARTON, SJ ;
NAKAHARA, S ;
ELLINGTON, M ;
CHAKRABARTI, UK ;
GEVA, M ;
LANE, E .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) :3666-3677
[9]   STRESS MEASUREMENTS OF PT/TI/INP AND PT/TI/SIO2/INP SYSTEMS - INSITU MEASUREMENTS THROUGH SINTERING AND AFTER RAPID THERMAL-PROCESSING [J].
KATZ, A ;
DAUTREMONTSMITH, WC .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (10) :6237-6246
[10]   RAPID THERMAL LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SIOX FILMS ONTO INP [J].
KATZ, A ;
FEINGOLD, A ;
PEARTON, SJ ;
CHAKRABARTI, UK .
APPLIED PHYSICS LETTERS, 1991, 59 (05) :579-581