OPTIMIZATION OF SPACER LAYER THICKNESS IN N-ALXGA1-XAS-PARA+-GAAS HETEROJUNCTION DIODES GROWN BY MOLECULAR-BEAM EPITAXY

被引：3

作者：

KHAMSEHPOUR, B ^{[1
]}

SINGER, KE ^{[1
]}

VANDENBERG, JA ^{[1
]}

VICKERMAN, JC ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 12期

关键词：

D O I：

10.1049/el:19860430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR DIODES

引用

页码：627 / 629

页数：3

共 6 条

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LUNARDI, LM ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :634-635

[2]

ENQUIST P, 1984, I PHYS C SER, V74, P599

[3] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[4] HIGH-GAIN, HIGH-FREQUENCY ALGAAS/GAAS GRADED BAND-GAP BASE BIPOLAR-TRANSISTORS WITH A BE DIFFUSION SETBACK LAYER IN THE BASE [J].

MALIK, RJ ;

CAPASSO, F ;

STALL, RA ;

KIEHL, RA ;

RYAN, RW ;

WUNDER, R ;

BETHEA, CG .

APPLIED PHYSICS LETTERS, 1985, 46 (06) :600-602

[5]

Shockley W., 1951, US Patent, Patent No. 2569347

[6] MOLECULAR-BEAM EPITAXIAL GAAS LAYERS FOR MESFETS [J].

WOOD, CEC .

APPLIED PHYSICS LETTERS, 1976, 29 (11) :746-748

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