DOUBLE HETEROJUNCTION GAALAS GAAS I2L INTEGRATED-CIRCUITS

被引：3
|
作者：
VANNEL, JP
MARTY, A
TASSELLI, J
CAZARRE, A
BAILBE, JP
机构：
[1] Laboratoire d'Automatique et d'Analyse des Systemes, Toulouse Cedex, 7
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 14期
关键词：
Integrated circuits; Semiconductor devices and materials;
D O I：
10.1049/el:19900630
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The fabrication and DC characterisation of GaAIAs/GaAs double heterojunction bipolar transistors (DHBTs) grown by molecular beam epitaxy are described. This baseline process has been developed for the implementation of heterojunction integrated injection logic (HI2L) integrated circuits. Results concerning an I2L ring oscillator and a divide-by-two circuit are given. © 1990, The Institution of Electrical Engineers. All rights reserved.
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收藏
页码：969 / 970
页数：2
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