AN INVESTIGATION OF THE THERMAL-STABILITY OF THE INTERFACIAL OXIDE IN POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS BY COMPARING DEVICE RESULTS WITH HIGH-RESOLUTION ELECTRON-MICROSCOPY OBSERVATIONS

被引：150

作者：

WOLSTENHOLME, GR ^{[1
]}

JORGENSEN, N ^{[1
]}

ASHBURN, P ^{[1
]}

BOOKER, GR ^{[1
]}

机构：

[1] UNIV OXFORD, DEPT MET & SCI MAT, OXFORD, ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.338861

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：225 / 233

页数：9

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