DEFECTS IN AMORPHOUS SI-N FILMS PREPARED BY RF SPUTTERING

被引:62
作者
SHIMIZU, T
OOZORA, S
MORIMOTO, A
KUMEDA, M
ISHII, N
机构
来源
SOLAR ENERGY MATERIALS | 1982年 / 8卷 / 1-3期
关键词
D O I
10.1016/0165-1633(82)90074-0
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
引用
收藏
页码:311 / 317
页数:7
相关论文
共 50 条
  • [21] Optical properties of PZT amorphous thin films prepared by RF magnetron sputtering
    Hu, ZG
    Lai, ZQ
    Huang, ZM
    Wang, GS
    Shi, FW
    Chu, JH
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2004, 23 (03) : 181 - +
  • [22] Microstructure and mechanical properties of Zr-Si-N films prepared by rf-reactive sputtering
    Nose, M
    Chiou, WA
    Zhou, M
    Mae, T
    Meshii, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2002, 20 (03): : 823 - 828
  • [23] NOTE ON THE NMR LINESHAPE OF H IN HYDROGENATED AMORPHOUS SI AND SI-N ALLOY-FILMS
    KUMEDA, M
    NAKANISHI, S
    SHIMIZU, T
    SOLID STATE COMMUNICATIONS, 1988, 67 (06) : 585 - 588
  • [24] PROPERTIES OF PURE SILICON AMORPHOUS FILMS PREPARED BY RF-BIAS SPUTTERING
    SUZUKI, M
    MAEKAWA, T
    KAKIMOTO, Y
    BANDOW, T
    JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 623 - 626
  • [25] Ti-Si-N films prepared by magnetron sputtering
    PAN Li a
    Rare Metals, 2012, 31 (02) : 183 - 188
  • [26] Ti-Si-N films prepared by magnetron sputtering
    Pan Li
    Bai Yizhen
    Zhang Dong
    Wang Jian
    RARE METALS, 2012, 31 (02) : 183 - 188
  • [27] FORMATION OF MICROCRYSTALLINE STRUCTURE IN A-SI-H FILMS PREPARED BY RF SPUTTERING
    NODA, M
    SHIMIZU, H
    KOHNO, H
    ISHIDA, H
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 823 - 826
  • [28] SPECTROSCOPIC-ELLIPSOMETRY ANALYSIS OF SI FILMS PREPARED BY RF-SPUTTERING
    MIYAZAKI, T
    ADACHI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12A): : 3770 - 3774
  • [29] Ti-Si-N films prepared by magnetron sputtering
    Li Pan
    Yizhen Bai
    Dong Zhang
    Jian Wang
    Rare Metals, 2012, 31 : 183 - 188
  • [30] Possibility for hole doping into amorphous InGaZnO4 films prepared by RF sputtering
    Kobayashi, Kenkichiro
    Kohno, Yoshiumi
    Tomita, Yasumasa
    Maeda, Yasuhisa
    Matsushima, Shigenori
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 2011, 8 (02): : 531 - 533