DEFECTS IN AMORPHOUS SI-N FILMS PREPARED BY RF SPUTTERING

被引：62
|
作者：
SHIMIZU, T
OOZORA, S
MORIMOTO, A
KUMEDA, M
ISHII, N
机构：
来源：
SOLAR ENERGY MATERIALS | 1982年 / 8卷 / 1-3期
关键词：
D O I：
10.1016/0165-1633(82)90074-0
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
引用
收藏
页码：311 / 317
页数：7
相关论文
共 50 条
  • [1] PROPERTIES OF HYDROGENATED AMORPHOUS SI-N FILMS PREPARED BY RF MAGNETRON SPUTTERING WITH EMPHASIS ON THE NONSTOICHIOMETRIC REGION
    BANERJEE, R
    BANDYOPADHYAY, AK
    RATH, JK
    BATABYAL, AK
    BARUA, AK
    THIN SOLID FILMS, 1990, 192 (02) : 295 - 307
  • [2] PRODUCTION AND CHARACTERIZATION OF SI-N FILMS OBTAINED BY RF MAGNETRON SPUTTERING
    OLIVEIRA, A
    CAVALEIRO, A
    VIEIRA, MT
    SURFACE & COATINGS TECHNOLOGY, 1993, 60 (1-3): : 463 - 467
  • [3] CHARACTERIZATION OF SI-N FILMS PREPARED BY REACTIVE ION-BEAM SPUTTERING
    AGGARWAL, MD
    ASHOK, S
    FONASH, SJ
    JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (03) : 491 - 504
  • [4] HYDROGEN EVOLUTION FROM AMORPHOUS SI-N FILMS
    MORIMOTO, A
    KOBAYASHI, I
    KUMEDA, M
    SHIMIZU, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (09): : L752 - L754
  • [5] NATURE OF DEFECTS IN AMORPHOUS GE-S AND SI-N
    SHIMIZU, T
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 71 (1-3) : 145 - 155
  • [6] PROPERTIES OF HYDROGENATED AMORPHOUS SI-N PREPARED BY VARIOUS METHODS
    MORIMOTO, A
    TSUJIMURA, Y
    KUMEDA, M
    SHIMIZU, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (11): : 1394 - 1398
  • [7] ATOMIC-STRUCTURE OF AMORPHOUS SI1-XCX FILMS PREPARED BY RF SPUTTERING
    SUZAKI, Y
    INOUE, S
    HASEGAWA, I
    YOSHII, K
    KAWABE, H
    THIN SOLID FILMS, 1989, 173 (02) : 235 - 242
  • [8] HYDROGEN EVOLUTION FROM AMORPHOUS SI-N FILMS.
    Morimoto, Akiharu
    Kobayashi, Isao
    Kumeda, Minoru
    Shimizu, Tatsuo
    1600, (25):
  • [9] PROPERTIES OF HYDROGENATED AMORPHOUS Si-N PREPARED BY VARIOUS METHODS.
    Morimoto, Akiharu
    Tsujimura, Yoshinori
    Kumeda, Minoru
    Shimizu, Tatsuo
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1985, 24 (11): : 1394 - 1398
  • [10] PROPERTIES OF AMORPHOUS SI PREPARED BY RF SPUTTERING WITH A HIGH AR PRESSURE
    SHIMIZU, T
    KUMEDA, M
    WATANABE, I
    KIRIYAMA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L235 - L238
12345