A THEORETICAL-STUDY OF RESONANT TUNNELLING IN THE DOUBLE-BARRIER STRUCTURE

被引:12
|
作者
PENG, JP [1 ]
CHEN, H [1 ]
ZHOU, SX [1 ]
机构
[1] INT CTR THEORET PHYS, I-34100 TRIESTE, ITALY
关键词
D O I
10.1088/0953-8984/1/32/014
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:5451 / 5461
页数:11
相关论文
共 50 条
  • [31] Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes
    Boucherit, M.
    Soltani, A.
    Monroy, E.
    Rousseau, M.
    Deresmes, D.
    Berthe, M.
    Durand, C.
    De Jaeger, J. -C.
    APPLIED PHYSICS LETTERS, 2011, 99 (18)
  • [32] THEORETICAL INVESTIGATION OF NOISE CHARACTERISTICS OF DOUBLE-BARRIER RESONANT-TUNNELING SYSTEMS
    CHEN, LY
    TING, CS
    PHYSICAL REVIEW B, 1991, 43 (05): : 4534 - 4537
  • [33] RESONANT TUNNELING WITH THE MASS VARIATION THROUGH RECTANGULAR DOUBLE-BARRIER STRUCTURE
    YAMAMOTO, H
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1987, 140 (01): : K23 - K25
  • [34] Time-Dependent Resonant Tunneling in a Double-Barrier Diode Structure
    M. V. Davidovich
    JETP Letters, 2019, 110 : 472 - 480
  • [35] ELECTROLUMINESCENCE AND IMPACT IONIZATION PHENOMENA IN A DOUBLE-BARRIER RESONANT TUNNELING STRUCTURE
    WHITE, CRH
    SKOLNICK, MS
    EAVES, L
    LEADBEATER, ML
    APPLIED PHYSICS LETTERS, 1991, 58 (11) : 1164 - 1166
  • [36] Time-Dependent Resonant Tunneling in a Double-Barrier Diode Structure
    Davidovich, M. V.
    JETP LETTERS, 2019, 110 (07) : 472 - 480
  • [37] TRAVERSAL TIME THROUGH DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE
    FIGIELSKI, T
    ACTA PHYSICA POLONICA A, 1993, 84 (03) : 587 - 589
  • [38] NONLINEAR DYNAMICAL RESPONSE OF A DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE
    AFONIN, VV
    RUDIN, AM
    PHYSICAL REVIEW B, 1994, 49 (15): : 10466 - 10473
  • [39] Uniaxial stress effects on a Si/Si1-xGex double-barrier resonant tunnelling structure studied by magnetotunnelling spectroscopy
    Gennser, U
    Zaslavsky, A
    Grutzmacher, DA
    Gassot, P
    Portal, JC
    APPLIED SURFACE SCIENCE, 1996, 102 : 242 - 246
  • [40] Cross-barrier recombination in a GaAs/AlGaAs double-barrier resonant tunneling structure
    Cockburn, JW
    Buckle, PD
    Skolnick, MS
    Birkett, MJ
    Teissier, R
    Smith, GW
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) : 8844 - 8846