HALL-EFFECT IN HIGH-PURITY AND PARA-DOPED GERMANIUM-CRYSTALS

被引：7

作者：

YEE, JH ^{[1
]}

SWIERKOWSKI, SP ^{[1
]}

ARMANTROUT, GA ^{[1
]}

WICHNER, R ^{[1
]}

机构：

[1] UNIV CALIF, LAWRENCE LIVERMORE LAB, LIVERMORE, CA 94550 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 09期

关键词：

D O I：

10.1063/1.1663894

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3949 / 3954

页数：6

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[8] LATTICE MOBILITY OF HOT CARRIERS [J].

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[9]

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[10] MAGNETOCONDUCTIVITY IN P-TYPE GERMANIUM [J].

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