J-MOS TRANSISTORS FABRICATED IN OXYGEN-IMPLANTED SILICON-ON-INSULATOR

被引：3

作者：

MACIVER, BA ^{[1
]}

JAIN, KC ^{[1
]}

机构：

[1] GM CORP,GMR ELECTR DEPT,RES LABS,WARREN,MI 48090

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 12期

关键词：

D O I：

10.1109/T-ED.1986.22852

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1953 / 1955

页数：3

共 50 条

[41] SiO2 formation in oxygen-implanted silicon [J].

Ahilea, T ;

Zolotoyabko, E .

JOURNAL OF CRYSTAL GROWTH, 1999, 198 :414-419

[42] Photoluminescence associated with {113} defects in oxygen-implanted silicon [J].

Sobolev, N. A. ;

Kalyadin, A. E. ;

Shek, E. I. ;

Shtel'makh, K. F. ;

Vdovin, V. I. ;

Gutakovskii, A. K. ;

Fedina, L. I. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (07)

[43] Structural studies of 20 keV oxygen-implanted silicon [J].

Gupta, GK ;

Yadav, AD ;

Rao, TKG ;

Dubey, SK .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 168 (04) :503-509

[44] Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer [J].

Wei, Xing ;

Wu, Aimin ;

Wang, Xiang ;

Li, Xianyuan ;

Ye, Fei ;

Chen, Jie ;

Chen, Meng ;

Zhang, Bo ;

Li, Chenglu ;

Zhang, Miao ;

Wang, Xi .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (01) :163-168

[45] Hydrostatic pressure effect on the redistribution of oxygen atoms in oxygen-implanted silicon [J].

Misiuk, A ;

Barcz, A ;

Ratajczak, J ;

Antonova, IV ;

Jun, J .

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 :115-120

[46] ANALYSIS OF THE POSSIBLE STATES OF SILICON-ON-INSULATOR MOS-TRANSISTORS AND PRACTICAL APPLICATION OF ITS RESULTS [J].

KRASIN, AA .

SOVIET MICROELECTRONICS, 1990, 19 (01) :1-10

[47] Dose dependence of microstructural development of buried oxide in oxygen implanted silicon-on-insulator material [J].

Bagchi, S ;

Krause, SJ ;

Roitman, P .

APPLIED PHYSICS LETTERS, 1997, 71 (15) :2136-2138

[48] Mechanism of defect formation in low-dose oxygen implanted silicon-on-insulator material [J].

Bagchi, S ;

Lee, JD ;

Krause, SJ ;

Roitman, P .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (01) :7-12

[49] Mechanism of defect formation in low-dose oxygen implanted silicon-on-insulator material [J].

Arizona State Univ, Tempe, United States .

J Electron Mater, 1 (7-12)

[50] THE CHARACTERISTICS OF CMOS DEVICES IN OXYGEN IMPLANTED SILICON-ON-INSULATOR - THE INFLUENCE OF THE MICROSTRUCTURE AT SILICON BURIED OXIDE INTERFACE [J].

MAO, BY ;

CHEN, CE ;

SUNDARESAN, R ;

POLLACK, G .

JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) :A11-A11

← 1 2 3 4 5 →