J-MOS TRANSISTORS FABRICATED IN OXYGEN-IMPLANTED SILICON-ON-INSULATOR

被引：3
作者：
MACIVER, BA [1 ]
JAIN, KC [1 ]
机构：
[1] GM CORP,GMR ELECTR DEPT,RES LABS,WARREN,MI 48090
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 12期
关键词：
D O I：
10.1109/T-ED.1986.22852
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1953 / 1955
页数：3
相关论文
共 50 条
[21]   DEPENDENCE OF TRANSCONDUCTANCE ON SUBSTRATE BIAS IN ULTRATHIN SILICON-ON-INSULATOR MOS-TRANSISTORS [J].
STURM, JC ;
TOKUNAGA, K .
ELECTRONICS LETTERS, 1989, 25 (18) :1233-1234
[22]   ALTERNATIVE RANDOM TELEGRAPH SIGNAL MECHANISMS IN SILICON-ON-INSULATOR MOS-TRANSISTORS [J].
SIMOEN, E ;
CLAEYS, C .
MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) :185-188
[23]   The electrically active centers in oxygen-implanted silicon [J].
Loshachenko, A. S. ;
Vyvenko, O. F. ;
Shek, E. I. ;
Sobolev, N. A. .
SEMICONDUCTORS, 2013, 47 (02) :285-288
[24]   Hydrogen gettering in annealed oxygen-implanted silicon [J].
Misiuk, A. ;
Barcz, A. ;
Ulyashin, A. ;
Antonova, I. V. ;
Prujszczyk, M. .
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2010, 13 (02) :161-165
[25]   THIN BURIED OXIDE IN OXYGEN-IMPLANTED SILICON [J].
SPAGGIARI, C ;
BERTONI, S ;
CEROFOLINI, GF ;
FUMAGALLI, P ;
MEDA, L .
CERAMICS INTERNATIONAL, 1993, 19 (06) :399-405
[26]   Triplexer fabricated in silicon-on-insulator chip [J].
Hitz, Breck .
Photonics Spectra, 2007, 41 (01)
[27]   SILICON-ON-INSULATOR BIPOLAR-TRANSISTORS [J].
RODDER, M ;
ANTONIADIS, DA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1604-1605
[28]   SILICON-ON-INSULATOR BIPOLAR-TRANSISTORS [J].
RODDER, M ;
ANTONIADIS, DA .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) :193-195
[29]   Luminescent and electrical properties of oxygen-implanted silicon [J].
Danilov, Denis ;
Vyvenko, Oleg ;
Loshachenko, Anton ;
Ber, Boris ;
Kasantsev, Dmitrii ;
Sobolev, Nikolay .
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14, NO 7, 2017, 14 (07)
[30]   The electrically active centers in oxygen-implanted silicon [J].
A. S. Loshachenko ;
O. F. Vyvenko ;
E. I. Shek ;
N. A. Sobolev .
Semiconductors, 2013, 47 :285-288
12345