J-MOS TRANSISTORS FABRICATED IN OXYGEN-IMPLANTED SILICON-ON-INSULATOR

被引：3
作者：
MACIVER, BA [1 ]
JAIN, KC [1 ]
机构：
[1] GM CORP,GMR ELECTR DEPT,RES LABS,WARREN,MI 48090
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 12期
关键词：
D O I：
10.1109/T-ED.1986.22852
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1953 / 1955
页数：3
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