J-MOS TRANSISTORS FABRICATED IN OXYGEN-IMPLANTED SILICON-ON-INSULATOR

被引：3

作者：

MACIVER, BA ^{[1
]}

JAIN, KC ^{[1
]}

机构：

[1] GM CORP,GMR ELECTR DEPT,RES LABS,WARREN,MI 48090

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 12期

关键词：

D O I：

10.1109/T-ED.1986.22852

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1953 / 1955

页数：3

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