EPITAXIAL LIFT-OFF GAAS LEDS TO SI FOR FABRICATION OF OPTO-ELECTRONIC INTEGRATED-CIRCUITS

被引：33

作者：

POLLENTIER, I

DEMEESTER, P

ACKAERT, A

BUYDENS, L

VANDAELE, P

BAETS, R

机构：

[1] Laboratory of Electromagnetism and Acoustics, University of Gent. IMEC, 9000 Gent

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 03期

关键词：

Integrated circuits; Lithography; Optoelectronics; Silicon;

D O I：

10.1049/el:19900130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report, for the first time, the successful integration of GaAs LEDs on Si using the epitaxial lift-off technique. LEDs were processed after the transfer and could be aligned to features on the Si substrate. LED contacts were defined on both sides of the thin layer. Operation characteristics similar to those of LEDs grown on GaAs were observed. This realisation holds out interesting prospects in the fabrication of quasi-monolithic opto-electronic integrated circuits. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：193 / 194

页数：2

共 9 条

[1] ACKAERT A, 1989, 19TH P EUR SOL STAT, P397
[2] DEMEESTER P, 1989, 15TH P EUR C OPT COM, P356
[3] POLLENTIER I, 1989, 19TH P EUR SOL STAT, P401
[4] TURNER GW, 1988, MATER RES SOC S P, V116, P179
[5] MESFET LIFT-OFF FROM GAAS SUBSTRATE TO GLASS HOST
VANHOOF, C
DERAEDT, W
VANROSSUM, M
BORGHS, G
[J]. ELECTRONICS LETTERS, 1989, 25 (02) : 136 - 137
[6] Wale M.J., 2015, 15TH P EUR C OPT COM, P368
[7] Yablonovitch E., 1989, IEEE Photonics Technology Letters, V1, P41, DOI 10.1109/68.91003
[8] EXTREME SELECTIVITY IN THE LIFT-OFF OF EPITAXIAL GAAS FILMS
YABLONOVITCH, E
GMITTER, T
HARBISON, JP
BHAT, R
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2222 - 2224
[9] YIYAN A, 1989, 5TH EUR C INT OPT PA

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