MONOLITHIC INTEGRATION OF A PIN PHOTODIODE AND A FIELD-EFFECT TRANSISTOR USING A NEW FABRICATION TECHNIQUE - GRADED STEP PROCESS

被引：19

作者：

MIURA, S

MACHIDA, H

WADA, O

NAKAI, K

SAKURAI, T

机构：

[1] Fujitsu Ltd, Atsugi, Jpn, Fujitsu Ltd, Atsugi, Jpn

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 04期

关键词：

D O I：

10.1063/1.95587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：389 / 391

页数：3

共 9 条

[1]

Carney J. K., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P48

[2]

Kim M. E., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P44

[3]

LEHNY RF, 1980, ELECTRON LETT, V16, P353

[4] A MONOLITHICALLY INTEGRATED ALGAAS/GAAS P-I-N/FET PHOTORECEIVER BY MOCVD [J].

MIURA, S ;

WADA, O ;

HAMAGUCHI, H ;

ITO, M ;

MAKIUCHI, M ;

NAKAI, K ;

SAKURAI, T .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :375-376

[5]

NAKAI K, UNPUB J CRYST GROWTH

[6]

NISHI H, 1981, INT S GAAS RELATED C, P365

[7] MONOLITHIC INTEGRATION OF AN ALGAAS/GAAS MULTIQUANTUM WELL LASER AND GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON A SEMI-INSULATING GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

SANADA, T ;

YAMAKOSHI, S ;

WADA, O ;

FUJII, T ;

SAKURAI, T ;

SASAKI, M .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :325-327

[8] MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A FIELD-EFFECT TRANSISTOR ON A GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

WADA, O ;

MIURA, S ;

ITO, M ;

FUJII, T ;

SAKURAI, T ;

HIYAMIZU, S .

APPLIED PHYSICS LETTERS, 1983, 42 (04) :380-382

[9] HIGH RADIANCE INGAASP-INP LENSED LEDS FOR OPTICAL COMMUNICATION-SYSTEMS AT 1.2-1.3 MU-M [J].

WADA, O ;

YAMAKOSHI, S ;

ABE, M ;

NISHITANI, Y ;

SAKURAI, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :174-178

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