RHEED OSCILLATION STUDIES OF MBE GROWTH OF SILICON

被引：0

作者：

SAKAMOTO, T ^{[1
]}

SAKAMOTO, K ^{[1
]}

MIKI, K ^{[1
]}

KAWAMURA, T ^{[1
]}

机构：

[1] YAMANASHI UNIV, KOFU, YAMANASHI 400, JAPAN

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have used reflection high energy electron diffraction (RHEED) to investigate the step structure and initial growth mechanism during Si MBE growth. The results show the step structure strongly depends upon both the substrate annealing parameter and the misorientation of the substrate surface. An azimuthal and glancing angle dependence on the period of RHEED intensity oscillation were found, both monolayer and biatomic-layer mode oscillation being observable.

引用

页码：99 / 108

页数：10

共 50 条

[1] RHEED OSCILLATION STUDIES OF MBE GROWTH OF SILICON
SAKAMOTO, T
SAKAMOTO, K
MIKI, K
KAWAMURA, T
MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 99 - 108
[2] RHEED STUDIES OF SEMICONDUCTOR GROWTH BY MBE
DOBSON, PJ
JOYCE, BA
NEAVE, JH
ZHANG, J
VACUUM, 1988, 38 (4-5) : 422 - 423
[3] RHEED INTENSITY OSCILLATIONS DURING SILICON MBE GROWTH
SAKAMOTO, T
KAWAI, NJ
NAKAGAWA, T
OHTA, K
KOJIMA, T
HASHIGUCHI, G
SURFACE SCIENCE, 1986, 174 (1-3) : 651 - 657
[4] OBSERVATION OF TRANSIENT BEHAVIOR OF GaAs MBE GROWTH BY RHEED OSCILLATION.
Sugiura, Hideo
Kawashima, Minoru
Horikoshi, Yoshiji
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (12): : 1847 - 1850
[5] OBSERVATION OF TRANSIENT-BEHAVIOR OF GAAS MBE GROWTH BY RHEED OSCILLATION
SUGIURA, H
KAWASHIMA, M
HORIKOSHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (12): : 1847 - 1850
[6] RHEED STUDIES OF MBE GROWTH MECHANISMS OF CDTE AND CDMNTE
WAAG, A
BEHR, T
LITZ, T
KUHNHEINRICH, B
HOMMEL, D
LANDWEHR, G
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 16 (1-3): : 103 - 107
[7] RHEED STUDIES DURING SURFACE CLEANING OF SILICON FOR MBE SUBSTRATES
DOMINGUEZ, F
TEMPEL, A
ZEHE, A
CRYSTAL RESEARCH AND TECHNOLOGY, 1991, 26 (02) : 207 - 210
[8] ON THE RHEED SPECULAR BEAM AND ITS INTENSITY OSCILLATION DURING MBE GROWTH OF GAAS
ZHANG, J
NEAVE, JH
JOYCE, BA
DOBSON, PJ
FAWCETT, PN
SURFACE SCIENCE, 1990, 231 (03) : 379 - 388
[9] MODULATED MOLECULAR-BEAM AND RHEED STUDIES OF MBE AND MOMBE GROWTH
GIBSON, EM
FOXON, CT
ZHANG, J
JOYCE, BA
JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) : 81 - 86
[10] SIMULTANEOUS OBSERVATION OF RHEED OSCILLATION DURING GaAs MBE GROWTH WITH MODULATED ELECTRON BEAM.
Sugiura, Hideo
Kawashima, Minoru
Horikoshi, Yoshiji
1600, (25):

← 1 2 3 4 5 →