THE ADSORPTION AND DECOMPOSITION OF NH3 ON SI(100) - DETECTION OF THE NH2(A) SPECIES

被引:149
作者
DRESSER, MJ [1 ]
TAYLOR, PA [1 ]
WALLACE, RM [1 ]
CHOYKE, WJ [1 ]
YATES, JT [1 ]
机构
[1] UNIV PITTSBURGH,CTR SURFACE SCI,DEPT CHEM,PITTSBURGH,PA 15260
关键词
D O I
10.1016/0039-6028(89)90621-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:75 / 107
页数:33
相关论文
共 50 条
[1]   METASTABLE ANGULAR-DISTRIBUTION FROM ELECTRON-STIMULATED DESORPTION [J].
ALVEY, MD ;
DRESSER, MJ ;
YATES, JT .
PHYSICAL REVIEW LETTERS, 1986, 56 (04) :367-370
[2]   THE REACTION OF SI(100) 2X1 WITH NO AND NH3 - THE ROLE OF SURFACE DANGLING BONDS [J].
AVOURIS, P ;
BOZSO, F ;
HAMERS, RJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1387-1392
[3]  
AVOURIS P, 1988, IN PRESS MATER RES S, V105
[4]   ADSORPTION AND THERMAL-DECOMPOSITION OF AMMONIA ON A NI(110) SURFACE - ISOLATION AND IDENTIFICATION OF ADSORBED NH2 AND NH [J].
BASSIGNANA, IC ;
WAGEMANN, K ;
KUPPERS, J ;
ERTL, G .
SURFACE SCIENCE, 1986, 175 (01) :22-44
[5]   LOW-TEMPERATURE NITRIDATION AND HYDROGENATION OF SI FILMS WITH NH3 - A PHOTOEMISSION-STUDY [J].
BISCHOFF, JL ;
KUBLER, L ;
BOLMONT, D .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :1407-1410
[6]  
BOZACK MJ, 1987, SURF SCI, V184, pL332, DOI 10.1016/S0039-6028(87)80259-5
[7]   REACTION CHEMISTRY AT THE SI(100) SURFACE - CONTROL THROUGH ACTIVE-SITE MANIPULATION [J].
BOZACK, MJ ;
CHOYKE, WJ ;
MUEHLHOFF, L ;
YATES, JT .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3750-3754
[8]   DEFECT-ENHANCED AND ELECTRON-ENHANCED CHEMISTRY AT SILICON SURFACES - REACTIVITY AND THERMAL-DESORPTION OF PROPYLENE ON SI(100)-(2X1) [J].
BOZACK, MJ ;
CHOYKE, WJ ;
MUEHLHOFF, L ;
YATES, JT .
SURFACE SCIENCE, 1986, 176 (03) :547-566
[9]   METHODS IN SEMICONDUCTOR SURFACE-CHEMISTRY [J].
BOZACK, MJ ;
MUEHLHOFF, L ;
RUSSELL, JN ;
CHOYKE, WJ ;
YATES, JT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (01) :1-8
[10]   REACTION OF SI(100) WITH NH3 - RATE-LIMITING STEPS AND REACTIVITY ENHANCEMENT VIA ELECTRONIC EXCITATION [J].
BOZSO, F ;
AVOURIS, P .
PHYSICAL REVIEW LETTERS, 1986, 57 (09) :1185-1188