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- [3] NONLINEAR MODEL OF THE P-N-P-N-STRUCTURE TURN-OFF PROCESS WITH CHARGE EXTRACTION BY REVERSE CURRENT RADIOTEKHNIKA I ELEKTRONIKA, 1984, 29 (10): : 2039 - 2047
- [4] INVESTIGATION OF GATE TURNED-OFF P-N-P-N-DEVICES WITH NONUNIFORM DOPING IN A WIDE N-BASE RADIOTEKHNIKA I ELEKTRONIKA, 1975, 20 (09): : 1993 - 1995
- [5] INVESTIGATION OF TURN-OFF OF A P-N-P-N STRUCTURE BY A GATE CURRENT PULSE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (01): : 176 - &
- [7] TURN-OFF PROCESS IN A P-N-P-N STRUCTURE AT HIGH INJECTION LEVELS IN BASE LAYERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 1998 - &
- [8] TRANSIENT PHENOMENA DURING TURN-OFF OF P-N-P-N STRUCTURE BY A BASE CONTROL CURRENT RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (01): : 89 - &
- [9] INTRINSIC ELECTRIC-FIELDS EFFECT ON GATE TURN-OFF PROCESS OF P-N-P-N DEVICES RADIOTEKHNIKA I ELEKTRONIKA, 1973, 18 (08): : 1682 - 1687
- [10] THEORY OF TURNING OFF ACTION OF P-N-P-N-STRUCTURE RADIOTEKHNIKA I ELEKTRONIKA, 1973, 18 (01): : 166 - 170