STRESS MEASUREMENT BY MICRORAMAN SPECTROSCOPY OF POLYCRYSTALLINE SILICON STRUCTURES

被引：32

作者：

BENRAKKAD, MS ^{[1
]}

BENITEZ, MA ^{[1
]}

ESTEVE, J ^{[1
]}

LOPEZVILLEGAS, JM ^{[1
]}

SAMITIER, J ^{[1
]}

MORANTE, JR ^{[1
]}

机构：

[1] CSIC,CNM,E-08193 BARCELONA,SPAIN

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 1995年 / 5卷 / 02期

关键词：

D O I：

10.1088/0960-1317/5/2/019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

in this work, microRaman spectroscopy is applied for the stress analysis of LPCVD polysilicon films deposited on SiO2 sacrificial layers. The features of the first-order Si Raman signal (shape, width and position of maximum) am analyzed taking into account the presence of structural defects and stress distribution in the layers. These measurements are correlated with the results obtained by using micromachined test structures.

引用

页码：132 / 135

页数：4

共 5 条

[1] BENRAKKAD MS, 1994, 1994 S P MAT RES SOC
[2] STRAIN AT SI-SIO2 INTERFACES STUDIED BY MICRO-RAMAN SPECTROSCOPY
BRUNNER, K
ABSTREITER, G
KOLBESEN, BO
MEUL, HW
[J]. APPLIED SURFACE SCIENCE, 1989, 39 (1-4) : 116 - 126
[3] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY
ENGLERT, T
ABSTREITER, G
PONTCHARRA, J
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 31 - 33
[4] RAMAN CHARACTERIZATION OF SOI-SIMOX STRUCTURES
MARTIN, E
JIMENEZ, J
PEREZRODRIGUES, A
MORANTE, JR
[J]. MATERIALS LETTERS, 1992, 15 (1-2) : 122 - 126
[5] STUDY OF THE RAMAN PEAK SHIFT AND THE LINEWIDTH OF LIGHT-EMITTING POROUS SILICON
YANG, M
HUANG, DM
HAO, PH
ZHANG, FL
HOU, XY
WANG, X
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) : 651 - 653

← 1 →