12-W BROAD AREA SEMICONDUCTOR AMPLIFIER WITH DIFFRACTION LIMITED OPTICAL OUTPUT

被引：19

作者：

GOLDBERG, L ^{[1
]}

WELLER, JF ^{[1
]}

MEHUYS, D ^{[1
]}

WELCH, DF ^{[1
]}

SCIFRES, DR ^{[1
]}

机构：

[1] SPECTRA DIODE LABS,SAN JOSE,CA 95134

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 11期

关键词：

AMPLIFIERS; SEMICONDUCTOR DEVICES; OPTICAL COMMUNICATION;

D O I：

10.1049/el:19910580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Broad area travelling wave GaAlAs SQW optical amplifiers have been fabricated and characterised. Using a 600-mu-m wide and 1000-mu-m long double pass amplifier, 12 W of peak pulsed output power was achieved with a 0.08-degrees wide diffraction limited far-field lobe. Small signal gain of 31 dB was measured in a 400-mu-m wide active area device.

引用

页码：927 / 929

页数：3

共 5 条

[1] HIGH PEAK POWER AND GATEABLE PICOSECOND OPTICAL PULSES FROM A DIODE-ARRAY TRAVELING-WAVE AMPLIFIER AND A MODE-LOCKED DIODE-LASER [J].