X-RAY TOPOGRAPHIC ASSESSMENT OF DISLOCATIONS IN CRYSTALS GROWN FROM SOLUTION

Aspects of dislocation generation and configuration which permits one to predict their nature and distribution are discussed. X-ray diffraction topography is used for imaging the defects. Growth dislocations in solution grown crystals follow straight path with strongly defined directions. The potential configuration of dislocations in the growing crystals can be evaluated using the theory developed by Klapper which is based on linear anisotropic elastic theory. The line direction analysis based on this theory enables one to characterise dislocations propagating in a growing crystal. A combined theoretical analysis and experimental investigation based on the above theory is presented.