DIFFUSION-COEFFICIENT OF HOLES IN SILICON BY MONTE-CARLO SIMULATION

被引：21

作者：

REGGIANI, L

BRUNETTI, R

NORMANTAS, E

机构：

[1] ACAD SCI LISSR,INST SEMICOND PHYS,VILNIUS 232000,LITHUANIA,USSR

[2] UNIV MODENA,CTR INTERUNIV STRUTTURA MAT,I-41100 MODENA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 04期

关键词：

D O I：

10.1063/1.336507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1212 / 1215

页数：4

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