GROWTH OF THE OPTICAL CONDUCTIVITY IN THE CU-O PLANES

被引：138

作者：

COOPER, SL ^{[1
]}

THOMAS, GA ^{[1
]}

ORENSTEIN, J ^{[1
]}

RAPKINE, DH ^{[1
]}

MILLIS, AJ ^{[1
]}

CHEONG, SW ^{[1
]}

COOPER, AS ^{[1
]}

FISK, Z ^{[1
]}

机构：

[1] UNIV CALIF LOS ALAMOS SCI LAB,LOS ALAMOS,NM 87545

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.41.11605

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the development of the optical conductivity as electrons are added to the Cu-O planes in Pr2-xCexCuO4-by varying x(0x0.2). In the metallic phases, contributions to the optical conductivity below 3 eV arise from three sources: mobile carriers, mid-infrared excitations, and charge-transfer excitations. The mobile carrier spectral weight grows roughly linearly with x, while the mid-infrared band appears to evolve at low doping via a transfer of spectral weight from the charge-transfer band. Comparing these results with hole doping in La2-xSrxCuO4- indicates an electron-hole symmetry that is not anticipated by standard charge-transfer insulator models. © 1990 The American Physical Society.

引用

页码：11605 / 11608

页数：4

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