TRANSIENT EFFECTS DURING DYNAMIC HOLOGRAM FORMATION IN BSO CRYSTALS - THEORY AND EXPERIMENT

被引：37

作者：

HEATON, JM ^{[1
]}

SOLYMAR, L ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT ENGN SCI,HOLOG GRP,OXFORD,ENGLAND

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 03期

关键词：

D O I：

10.1109/3.161

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：558 / 567

页数：10

共 38 条

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