TRANSIENT EFFECTS DURING DYNAMIC HOLOGRAM FORMATION IN BSO CRYSTALS - THEORY AND EXPERIMENT

被引:37
作者
HEATON, JM [1 ]
SOLYMAR, L [1 ]
机构
[1] UNIV OXFORD,DEPT ENGN SCI,HOLOG GRP,OXFORD,ENGLAND
关键词
D O I
10.1109/3.161
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:558 / 567
页数:10
相关论文
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