CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY

被引：140
作者：
GOURLEY, PL
FRITZ, IJ
DAWSON, LR
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 05期
关键词：
D O I：
10.1063/1.99471
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：377 / 379
页数：3
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