IN-SITU IMAGING OF MU-N LOAD INDENTS INTO GAAS

Nanomechanical devices constitute an important and growing field, as they allow for new understanding of the mechanical properties at interfaces and surfaces. As an example, a newly developed nanoindentation device has been used to accomplish mu N load indents into GaAs. First, it is shown that a plastic zone can be measured and is comparable to theory. Also, it is shown that the rate of indentation affects both the depth and upset zone of low load indents, implying a strain-rate sensitivity effect at room temperature. This is reinforced by observation of what appears to be a glide-based relaxation process.