EXTENDED GOODMAN MODEL FOR SERIES RESISTANCE MASKING ON BULKY SEMICONDUCTOR JUNCTION CAPACITANCE

被引：6

作者：

CHAN, CL

SHIH, I

机构：

[1] Electrical Engineering Department, McGill University, Montreal, P.Q. H3A 2A7

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 10期

关键词：

D O I：

10.1063/1.345132

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of series resistance on the apparent semiconductor junction capacitance C' has been studied after Goodman [J. Appl. Phys. 34, 329 (1963)] in an attempt to explain the occurrence of minima in the apparent C' -2 vs voltage characteristics at high frequencies and for a large series resistance. A correction scheme has been formulated to convert C'-2 into the actual C-2 at any bias and frequency. The present model is consistent with the apparent capacitance behavior of a commercial Si Zener diode in series with a discrete resistor.

引用

页码：6544 / 6547

页数：4

共 9 条

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