INTERFACE STUDY OF HYDROGENATED AMORPHOUS-SILICON NITRIDE ON HYDROGENATED AMORPHOUS-SILICON BY X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：0

作者：

BEAUDOIN, M ^{[1
]}

ARSENAULT, CJ ^{[1
]}

IZQUIERDO, R ^{[1
]}

MEUNIER, M ^{[1
]}

机构：

[1] ECOLE POLYTECH MONTREAL,DEPT GENIE PHYS,MONTREAL H3C 3A7,QUEBEC,CANADA

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 25期

关键词：

D O I：

10.1063/1.102299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2640 / 2642

页数：3

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