REACTIVE SPUTTERING OF ZIRCONIUM WITH OXYGEN

被引：6

作者：

BLICKENSDERFER, R ^{[1
]}

LINCOLN, RL ^{[1
]}

ROMANS, PA ^{[1
]}

机构：

[1] US DEPT INTERIOR, BUR MINES, ALBANY MET RES CTR, ALBANY, OR 97321 USA

来源：

THIN SOLID FILMS | 1976年 / 37卷 / 03期

关键词：

D O I：

10.1016/0040-6090(76)90596-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L73 / L75

页数：3

共 13 条

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[2] CESIUM ION SPUTTERING OF ALUMINUM [J].

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[3]

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[4]

CANTAGREL M, 1973, J MATER SCI, V8, P1711, DOI 10.1007/BF02403521

[5] DIELECTRIC THIN FILMS THROUGH RF SPUTTERING [J].

DAVIDSE, PD ;

MAISSEL, LI .

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[6]

GERAGHTY KG, 1974, 2788 LAWR BERK LAB R

[7]

GREINER JH, 1974, J APPL PHYS, V45, P32, DOI 10.1063/1.1662979

[8] CESIUM-ION BOMBARDMENT OF ALUMINUM OXIDE IN A CONTROLLED OXYGEN ENVIRONMENT [J].

HASSELTINE, EH ;

HURLBUT, FC ;

OLSON, NT ;

SMITH, HP .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) :4313-+

[9] REACTIVE SPUTTERING OF METALS IN OXIDIZING ATMOSPHERES [J].

HELLER, J .

THIN SOLID FILMS, 1973, 7 (02) :163-176

[10] EFFECT OF OXYGEN ON RF-SPUTTERING RATE OF SIO2 [J].

JONES, RE ;

WINTERS, HF ;

MAISSEL, LI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1968, 5 (03) :84-&

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