CHARGE SHIELDING EFFECTS OF PHOTOEXCITED MOBILE CARRIERS ON OCCUPIED DEEP TRAPPING CENTERS IN BSO

被引:14
作者
ATTARD, AE
机构
来源
APPLIED OPTICS | 1988年 / 27卷 / 02期
关键词
D O I
10.1364/AO.27.000232
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:232 / 238
页数:7
相关论文
共 18 条
[1]   EXPERIMENTAL-OBSERVATIONS OF TRAPPING LEVELS IN BSO [J].
ATTARD, AE ;
BROWN, TX .
APPLIED OPTICS, 1986, 25 (18) :3253-3259
[2]  
EICHLER HJ, 1986, LASER INDUCED DYNAMI, P72
[3]   TRANSPORT-PROPERTIES OF PHOTOELECTRONS IN BI12SIO20 [J].
GROUSSON, R ;
HENRY, M ;
MALLICK, S .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) :224-229
[4]   HOLOGRAPHY, COHERENT-LIGHT AMPLIFICATION AND OPTICAL-PHASE CONJUGATION WITH PHOTOREFRACTIVE MATERIALS [J].
GUNTER, P .
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1982, 93 (04) :199-299
[5]   THE PHOTOREFRACTIVE EFFECT - A REVIEW [J].
HALL, TJ ;
JAURA, R ;
CONNORS, LM ;
FOOTE, PD .
PROGRESS IN QUANTUM ELECTRONICS, 1985, 10 (02) :77-146
[6]   NANOSECOND 4-WAVE MIXING AND HOLOGRAPHY IN BSO CRYSTALS [J].
HERMANN, JP ;
HERRIAU, JP ;
HUIGNARD, JP .
APPLIED OPTICS, 1981, 20 (13) :2173-2175
[7]   HOLOGRAM FIXING PROCESS AT ROOM-TEMPERATURE IN PHOTOREFRACTIVE BI12SIO20 CRYSTALS [J].
HERRIAU, JP ;
HUIGNARD, JP .
APPLIED PHYSICS LETTERS, 1986, 49 (18) :1140-1142
[8]   PHASE-CONJUGATION AND SPATIAL-FREQUENCY DEPENDENCE OF WAVE-FRONT REFLECTIVITY IN BI12SIO20 CRYSTALS [J].
HUIGNARD, JP ;
HERRIAU, JP ;
RIVET, G ;
GUNTER, P .
OPTICS LETTERS, 1980, 5 (03) :102-104
[9]   EFFECT OF APPLIED ELECTRIC-FIELD ON THE BUILDUP AND DECAY OF PHOTOREFRACTIVE GRATINGS [J].
JONATHAN, JMC ;
HELLWARTH, RW ;
ROOSEN, G .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (10) :1936-1941
[10]  
KAMSHILIN AA, 1981, OPT COMMUN, V46, P429