RECOMBINATION PROCESSES IN ANODIZED POROUS-SI AS STUDIED BY OPTICALLY-DETECTED MAGNETIC-RESONANCE

被引：2
作者：
MOCHIZUKI, Y
MIZUTA, M
机构：
[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba Ibaraki, 305
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 10A期
关键词：
POROUS-SI; PHOTOLUMINESCENCE; OPTICALLY-DETECTED MAGNETIC RESONANCE;
D O I：
10.1143/JJAP.32.L1387
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optically-detected magnetic resonance measurements at 1.6 K on anodized porous-Si are performed, in which the visible and infrared luminescence bands are separately monitored. The Si dangling-bond centers are detected and it is shown that these delects are dominantly linked with the infrared luminescence process providing a competing nonradiative channel. The observed anisotropy of the resonance signal reflects the crystalline environment of the region giving rise to the infrared luminescence. The defect is found to have a negligible interaction with the visible recombination process so that the carriers responsible for this light emission are suggested to be localized in a structurally different region from the infrared-emitting one.
引用
收藏
页码：L1387 / L1390
页数：4
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