共 50 条
- [1] INFLUENCE OF ANNEALING ON THE DIFFUSION LENGTH OF THE MINORITY-CARRIERS IN N-TYPE SIC(6H) SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 959 - 960
- [2] INFLUENCE OF DEEP LEVELS ON THE LIFETIME OF MINORITY-CARRIERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (08): : 930 - 931
- [4] RECAPTURE OF THE MINORITY-CARRIERS UNDER PHOTOIONIZATION CONDITIONS IN EPITAXIAL N-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (01): : 50 - 56
- [5] THE LIFETIME OF MINORITY-CARRIERS IN POLYCRYSTALLINE SEMICONDUCTORS PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1987, 101 (01): : 137 - 141
- [6] MODEL OF RECOMBINATION OF MINORITY-CARRIERS IN N-TYPE GERMANIUM IRRADIATED WITH 660 MEV PROTONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (09): : 1032 - 1034
- [8] LIFETIME OF THE MINORITY-CARRIERS IN P-TYPE EPITAXIAL CDXHG1-XTE FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (10): : 1026 - 1027
- [9] PROBLEM OF DETERMINATION OF THE DIFFUSION LENGTH OF THE MINORITY-CARRIERS IN N-TYPE GASB-S SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (04): : 453 - 454
- [10] LIFETIME AND DIFFUSION CONSTANT OF MINORITY-CARRIERS IN GESE THIN-FILMS DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1977, 30 (04): : 511 - 513