LAYERED AND HOMOGENEOUS FILMS OF ALUMINUM AND ALUMINUM SILICON WITH TITANIUM AND TUNGSTEN FOR MULTILEVEL INTERCONNECTS

被引：39

作者：

GARDNER, DS ^{[1
]}

MICHALKA, TL ^{[1
]}

SARASWAT, KC ^{[1
]}

BARBEE, TW ^{[1
]}

MCVITTIE, JP ^{[1
]}

MEINDL, JD ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1109/T-ED.1985.21927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：174 / 183

页数：10

共 39 条

[1]

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[2]

BARBEE TW, 1984, MULTILAYER STRUCTURE

[3]

BARBEE TW, 1980, SYNTHESIS PROPERTIES, P93

[4]

BOWER RW, 1973, APPL PHYS LETT, V23, P99, DOI 10.1063/1.1654823

[5]

BRORS DL, 1984, SOLID STATE TECHNOL, V27, P313

[6]

CADIEN KC, 1984, J VAC SCI TECHNO JAN, P82

[7]

d'Heurle F.M., 1972, NATURE BEHAVIOR GRAI, P339

[8] EFFECTS OF MG ADDITIONS ON ELECTROMIGRATION BEHAVIOR OF AL THIN-FILM CONDUCTORS [J].

DHEURLE, FM ;

GANGULEE, A ;

ALIOTTA, CF ;

RANIERI, VA .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (03) :497-515

[9] EFFECT OF COPPER ADDITIONS ON ELECTROMIGRATION IN ALUMINUM THIN FILMS [J].

DHEURLE, FM .

METALLURGICAL TRANSACTIONS, 1971, 2 (03) :683-&

[10] ELECTROMIGRATION OF NI IN AL THIN-FILM CONDUCTORS [J].

DHEURLE, FM ;

GANGULEE, A ;

ALIOTTA, CF ;

RANIERI, VA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) :4845-4846

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