ATOMISTIC MODELS OF INTERFACE STRUCTURES OF GAAS-ALXGA1-XAS (X=0.2-1) QUANTUM-WELLS GROWN BY INTERRUPTED AND UNINTERRUPTED MBE

被引:163
作者
TANAKA, M
SAKAKI, H
机构
[1] Univ of Tokyo, Tokyo, Jpn, Univ of Tokyo, Tokyo, Jpn
关键词
ATOMISTIC MODELS - BOTTOM INTERFACES - GROWTH INTERRUPTION - HETEROINTERFACE STRUCTURES - QUANTUM WELLS;
D O I
10.1016/0022-0248(87)90383-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
(Edited Abstract)
引用
收藏
页码:153 / 158
页数:6
相关论文
共 10 条
[1]   EFFECT OF WELL SIZE FLUCTUATION ON PHOTO-LUMINESCENCE SPECTRUM OF ALAS-GAAS SUPER-LATTICES [J].
GOLDSTEIN, L ;
HORIKOSHI, Y ;
TARUCHA, S ;
OKAMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10) :1489-1492
[2]   THE DETERMINATION OF MBE GROWTH MECHANISMS USING DYNAMIC RHEED TECHNIQUES [J].
JOYCE, BA ;
DOBSON, PJ ;
NEAVE, JH ;
ZHANG, J .
SURFACE SCIENCE, 1986, 174 (1-3) :1-9
[3]   PHOTOLUMINESCENCE OF ALGAAS GAAS QUANTUM WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
KAWAI, H ;
KANEKO, K ;
WATANABE, N .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :463-467
[4]  
NEAVE JN, 1983, APPL PHYS LETT, V1, P1
[5]   ONE ATOMIC LAYER HETEROINTERFACE FLUCTUATIONS IN GAAS-ALAS QUANTUM WELL STRUCTURES AND THEIR SUPPRESSION BY INSERTION OF SMOOTHING PERIOD IN MOLECULAR-BEAM EPITAXY [J].
SAKAKI, H ;
TANAKA, M ;
YOSHINO, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L417-L420
[6]  
SAKAKI H, 1984, 1983 P INT S F QUANT
[7]   THEORY OF PHOTOLUMINESCENCE LINE-SHAPE DUE TO INTERFACIAL QUALITY IN QUANTUM WELL STRUCTURES [J].
SINGH, J ;
BAJAJ, KK ;
CHAUDHURI, S .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :805-807
[8]   ATOMIC-SCALE STRUCTURES OF TOP AND BOTTOM HETEROINTERFACES IN GAAS-ALXGA1-XAS (X=0.2-1) QUANTUM-WELLS PREPARED BY MOLECULAR-BEAM EPITAXY WITH GROWTH INTERRUPTION [J].
TANAKA, M ;
SAKAKI, H ;
YOSHINO, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02) :L155-L158
[9]   PHOTOLUMINESCENCE AND ABSORPTION LINEWIDTH OF EXTREMELY FLAT GAAS-ALAS QUANTUM-WELLS PREPARED BY MOLECULAR-BEAM EPITAXY INCLUDING INTERRUPTED DEPOSITION FOR ATOMIC LAYER SMOOTHING [J].
TANAKA, M ;
SAKAKI, H ;
YOSHINO, J ;
FURUTA, T .
SURFACE SCIENCE, 1986, 174 (1-3) :65-70
[10]   OPTICAL CHARACTERIZATION OF INTERFACE DISORDER IN GAAS-GA1-XALXAS MULTI-QUANTUM WELL STRUCTURES [J].
WEISBUCH, C ;
DINGLE, R ;
GOSSARD, AC ;
WIEGMANN, W .
SOLID STATE COMMUNICATIONS, 1981, 38 (08) :709-712