SUBSTRATE EFFECT ON THE TRANSPORT-PROPERTIES OF SEMICONDUCTING-FILMS

被引：7
作者：
BARTELS, A
PEINER, E
SCHLACHETZKI, A
机构：
[1] Institut für Halbleitertechnik, Technische Universität Braunschweig, D-38106 Braunschweig
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 04期
关键词：
D O I：
10.1063/1.358917
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this study, transport properties of InP/Si heteroepitaxial layers were investigated. Current-voltage characteristics, measured across the heterointerface, revealed diode behavior at 300 K only with Si of p-type conductivity. With n-type Si, a transition from Ohmic behavior at 300 K to a diode characteristic at low temperatures was observed at 250 K. Due to the efficient electrical isolation of layer and p-type substrate van der Pauw measurements with InP/p-Si could be analyzed in the conventional manner. For InP/n-type Si the applicability of the two-layer conduction model suggested by Petritz could be demonstrated for 300 K measurements. With decreasing temperature a pronounced deviation from the model occurred due to the increased effect of the heterointerface. © 1995 American Institute of Physics.
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收藏
页码：1621 / 1626
页数：6
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