An investigation of dopant gases in plasma immersion ion implantation

被引：14
作者：
Qin, S
Bernstein, JD
Zhao, ZF
Chan, C
Shao, JQ
Denholm, S
机构：
[1] NORTHEASTERN UNIV, DEPT ELECT & COMP ENGN, PLASMA SCI & MICROELECTR LAB, BOSTON, MA 02115 USA
[2] EATON CORP, DIV SEMICOND EQUIPMENT, BEVERLY, MA 01915 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 106卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(95)00779-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The charging and etching effects of hydride and fluoride gases in plasma immersion ion implantation (PIII) doping experiments have been investigated. Both phenomena can affect implant profile and dose, alter device structure, and degrade device reliability. In addition, charge accumulation significantly reduces implant energy. Helium is a good choice as a diluting gas for PIII doping processes due to its low ionization rate, inertness, and minimal etching and charging effects.
引用
收藏
页码：636 / 640
页数：5
相关论文
共 18 条
[1]   HYDROGENATION OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS BY PLASMA ION-IMPLANTATION [J].
BERNSTEIN, DJ ;
QIN, S ;
CHAN, C ;
KING, TJ .
IEEE ELECTRON DEVICE LETTERS, 1995, 16 (10) :421-423
[2]   PARTICLE-IN-CELL CHARGED-PARTICLE SIMULATIONS, PLUS MONTE-CARLO COLLISIONS WITH NEUTRAL ATOMS, PIC-MCC [J].
BIRDSALL, CK .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 1991, 19 (02) :65-85
[3]   PLASMA IMMERSION ION-IMPLANTATION FOR ULSI PROCESSING [J].
CHEUNG, NW .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4) :811-820
[4]   CLEANING AND PASSIVATION OF THE SI(100) SURFACE BY LOW-TEMPERATURE REMOTE HYDROGEN PLASMA TREATMENT FOR SI EPITAXY [J].
HSU, T ;
ANTHONY, B ;
QIAN, R ;
IRBY, J ;
BANERJEE, S ;
TASCH, A ;
LIN, S ;
MARCUS, H ;
MAGEE, C .
JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (03) :279-287
[5]   ANOMALOUS BEHAVIOR OF SHALLOW BF3 PLASMA IMMERSION ION-IMPLANTATION [J].
JONES, EC ;
EN, W ;
OGAWA, S ;
FRASER, DB ;
CHEUNG, NW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :956-961
[6]   PLASMA ION-DOPING TECHNIQUE WITH 20-KHZ BIASED ELECTRON-CYCLOTRON RESONANCE DISCHARGE [J].
KITAGAWA, M ;
MATSUO, N ;
FUSE, G ;
IWASAKI, H ;
YOSHIDA, A ;
HIRAO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2139-L2141
[7]   MODEL OF PLASMA IMMERSION ION-IMPLANTATION [J].
LIEBERMAN, MA .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) :2926-2929
[8]   NON-MASS-SEPARATED ION SHOWER DOPING OF POLYCRYSTALLINE SILICON [J].
MISHIMA, Y ;
TAKEI, M .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) :4933-4938
[9]  
MORGAN RS, 1985, PLASMA ETCHING SEMIC, P50
[10]   THE RESPONSE OF A MICROWAVE MULTIPOLAR BUCKET PLASMA TO A HIGH-VOLTAGE PULSE WITH FINITE RISE TIME [J].
QIN, S ;
CHAN, C .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 1992, 20 (05) :569-571
12