PHOTO CHEMICAL VAPOR-DEPOSITION OF METAL-OXIDE FILMS RELATING TO BI-SR-CA-CU-O SUPERCONDUCTOR

被引:5
作者
KOINUMA, H
CHAUDHARY, KA
NAKABAYASHI, M
SHIRAISHI, T
HASHIMOTO, T
KITAZAWA, K
SUEMUNE, Y
YAMAMOTO, T
机构
[1] TOKAI UNIV,FAC ENGN,DEPT COMMUN,HIRATSUKA,KANAGAWA 25912,JAPAN
[2] UNIV TOKYO,FAC ENGN,DEPT IND CHEM,BUNKYO KU,TOKYO 113,JAPAN
[3] NIHON KAGAKU SANGYO CO LTD,SOKA 340,JAPAN
[4] TOKYO INST TECHNOL,RESOURCES UTILIZAT RES LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 04期
关键词
HIGH-TC SUPERCONDUCTOR; BI-SR-CA-CU-O SYSTEM; PHOTO CVD; OXIDE FILM; LOW TEMPERATURE GROWTH; CA-CU-O;
D O I
10.1143/JJAP.30.656
中图分类号
O59 [应用物理学];
学科分类号
摘要
Oxide films relating to high-T(c) superconducting Bi-Sr-Ca-Cu-O system were prepared by an oxidative photochemical vapor deposition using a low pressure mercury lamp. Bismuth oxide film was prepared by the photo decomposition of Bi(C6H5)3 in the presence of oxygen (20 Torr) at 300-degrees-C, while no film was obtained without the UV light irradiation. The UV light irradiation increased X-ray diffraction peak intensities of CuO, CaCO3, and SrCO3 films prepared from Cu(dipyvaloylmethanate: DPM)2, Ca(DPM)2, and Sr(DPM)2, respectively, at a temperatures of 400-degrees-C. By simultaneous supply of Ca(DPM)2 and Cu(DPM)2, Ca2CuO3 crystalline film without CaCO3 contamination was formed at 400-degrees-C. Without the UV irradiation, amorphous Ca-Cu-O film was obtained by thermal CVD. Photochemical reactions using N2O and NO2 instead of O2 were also examined.
引用
收藏
页码:656 / 660
页数:5
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