STRUCTURE-ANALYSIS OF OVAL DEFECT ON MOLECULAR-BEAM EPITAXIAL GAAS LAYER BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION

被引：38
作者：
KAKIBAYASHI, H
NAGATA, F
KATAYAMA, Y
SHIRAKI, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 11期
关键词：
D O I：
10.1143/JJAP.23.L846
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L846 / L848
页数：3
相关论文
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