SHALLOW ACCEPTOR BINDING-ENERGY AND LIFETIME OF DONOR-ACCEPTOR PAIRS IN GALLIUM-ARSENIDE

被引：36

作者：

KAMIYA, T ^{[1
]}

WAGNER, E ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPER FORSCH,STUTTGART,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.323118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3219 / 3223

页数：5

共 32 条

[1]

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[2]

ASHEN DJ, TO BE PUBLISHED

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BEBB, HB .

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[5] SHALLOW ACCEPTOR LUMINESCENCE IN GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

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[7] RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE [J].

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PHYSICAL REVIEW, 1969, 184 (03) :788-&

[8] ACCEPTOR-TO-BAND TRANSITIONS IN SEMICONDUCTORS - PHOTOLUMINESCENCE, EXPONENTIAL ABSORPTION EDGES, AND FINAL-STATE INTERACTIONS [J].

DOW, JD ;

SMITH, DL ;

LEDERMAN, FL .

PHYSICAL REVIEW B, 1973, 8 (10) :4612-4626

[9] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J].

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[10]

KAMIYA T, 1975, EUROPEAN SOLID STATE

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