EFFECT OF LITHIUM ON RECOMBINATION IN N-TYPE SILICON IRRADIATED BY FAST ELECTRONS

被引：0

作者：

VAVILOV, VS

KRYUKOVA, IV

CHUKICHE.MV

机构：

来源：

SOVIET PHYSICS SOLID STATE,USSR | 1965年 / 6卷 / 09期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2097 / +

页数：1

共 10 条

[1] CHUKICHEV MV, 1961, FIZ TVERD TELA, V3, P935
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[3] DIFFUSION OF LI IN SI AT HIGH-T AND THE ISOTOPE EFFECT
PELL, EM
[J]. PHYSICAL REVIEW, 1960, 119 (03): : 1014 - 1021
[4] PETROVA DA, 1960, SILICON, P395
[5] REISS H, 1956, J MET, V8, P276
[6] EFFECT OF OXYGEN ON THE CARRIER LIFE-TIME IN SILICON
ROBERTS, DH
STEPHENS, PH
HUNT, PH
[J]. NATURE, 1957, 180 (4587) : 665 - 666
[7] SMIRNOVA IV, 1962, FIZ TVERD TELA, V5, P3373
[8] VAVILOV VS, 1962, FIZ TVERD TELA, V5, P1128
[9] VAVILOV VS, 1964, FIZ TVERD TELA, V6, P2634
[10] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON
WATKINS, GD
CORBETT, JW
WALKER, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1198 - 1203