CURRENT AMPLIFICATION IN NONHOMOGENEOUS-BASE STRUCTURE AND STATIC INDUCTION TRANSISTOR STRUCTURE

被引：9
作者：
NISHIZAWA, J [1 ]
NONAKA, K [1 ]
TAMAMUSHI, T [1 ]
机构：
[1] SEMICOND RES INST, KAWAUCHI, SENDAI 980, JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 10期
关键词：
D O I：
10.1063/1.335344
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4783 / 4797
页数：15
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