CURRENT METALLIZATION ISSUES IN MICROELECTRONIC DEVICES

被引：2

作者：

TU, KN

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.572726

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：216 / 217

页数：2

共 17 条

[1] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].

CROWDER, BL ;

ZIRINSKY, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :369-371

[2]

DHEURLE FM, 1978, THIN FILMS INTERDIFF, pCH8

[3] TANTALUM SILICIDE POLYCRYSTALLINE SILICON - HIGH CONDUCTIVITY GATES FOR CMOS LSI APPLICATIONS [J].

FRASER, DB ;

MURARKA, SP ;

TRETOLA, AR ;

SINHA, AK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :345-348

[4] SIZE DEPENDENCE OF EFFECTIVE BARRIER HEIGHTS OF MIXED-PHASE CONTACTS [J].

FREEOUF, JL ;

JACKSON, TN ;

LAUX, SE ;

WOODALL, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :570-573

[5]

GOSELE U, 1982, J APPL PHYS, V53, P8759, DOI 10.1063/1.330477

[6] GROWTH-KINETICS OF PLANAR BINARY DIFFUSION COUPLES - THIN-FILM CASE VERSUS BULK CASES [J].

GOSELE, U ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3252-3260

[7]

HENTZELL HTG, 1983, J APPL PHYS, V54, P6929, DOI 10.1063/1.332000

[8]

HENTZELL HTG, 1983, J APPL PHYS, V54, P6923, DOI 10.1063/1.331999

[9] KINETICS OF COMPOUND FORMATION IN THIN-FILM COUPLES OF AL AND TRANSITION-METALS [J].

HOWARD, JK ;

LEVER, RF ;

SMITH, PJ ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :68-71

[10]

HUNTINGTON HB, 1975, DIFFUSION SOLIDS REC

← 1 2 →