AN ETCH FOR DELINEATION OF DEFECTS IN SILICON

[1] CARBRERO N, 1960, SURFACE CHEM METALS, P71

[2] DARAGONA FS, 1972, J ELECTROCHEM SOC, V119, P948

[3] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1193 - 1195

[4] GATOS HC, 1963, MIT293 TECHN REP

[5] DEFECTS IN SILICON SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 17 - 31

[6] SURFACE ENERGY OF GERMANIUM AND SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 524 - 527

[7] JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[8] DEFECT ETCH FOR (100) SILICON EVALUATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : 479 - 483

[9] SIRTL E, 1961, Z METALLKD, V52, P529

[10] OXYGEN PRECIPITATION AND GENERATION OF DISLOCATIONS IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (04): : 615 - 631

[1] CARBRERO N, 1960, SURFACE CHEM METALS, P71

[2] DARAGONA FS, 1972, J ELECTROCHEM SOC, V119, P948

[3] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1193 - 1195

[4] GATOS HC, 1963, MIT293 TECHN REP

[5] DEFECTS IN SILICON SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 17 - 31

[6] SURFACE ENERGY OF GERMANIUM AND SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 524 - 527

[7] JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[8] DEFECT ETCH FOR (100) SILICON EVALUATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : 479 - 483

[9] SIRTL E, 1961, Z METALLKD, V52, P529

[10] OXYGEN PRECIPITATION AND GENERATION OF DISLOCATIONS IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (04): : 615 - 631