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- [35] PHOTOQUENCHING AND PHOTOINDUCED-RECOVERY PROPERTIES OF THE EL2 DEFECT IN GAAS - EVIDENCE AGAINST THE IDENTIFICATION OF EL2 WITH THE ISOLATED ASGA DEFECT PHYSICAL REVIEW B, 1989, 39 (17): : 13001 - 13004
- [37] Hydrostatic pressure and uniaxial stress in investigations of the EL2 defect in GaAs HIGH PRESSURE IN SEMICONDUCTOR PHYSICS I, 1998, 54 : 427 - 455
- [38] HIGH-RESOLUTION PHOTOCONDUCTIVITY SPECTRA OF THE EL2 DEFECT IN GAAS SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 375 - 379