EL2 DEFECT IN GAAS

被引：0

作者：

KAMINSKA, M

WEBER, ER

机构：

[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

来源：

IMPERFECTIONS IN III/V MATERIALS | 1993年 / 38卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：59 / 89

页数：31

共 50 条

[21] PROPERTIES OF GAAS RELATED TO THE METASTABILITY OF THE EL2 DEFECT
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[22] ISOLATED AS ANTISITE IN GAAS - POSSIBILITY OF THE EL2 DEFECT
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[23] ATOMIC MODEL FOR THE EL2 DEFECT IN GAAS - REPLY
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[24] Defect metastability in surfaces:: A study of EL2 defect in GaAs(110)
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[25] PIEZOSPECTROSCOPIC EVIDENCE FOR TETRAHEDRAL SYMMETRY OF THE EL2 DEFECT IN GAAS
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[26] Optical nonlinearities in bulk GaAs determined by EL2 defect
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[27] RECENT DEVELOPMENTS IN THE STUDY OF THE EL2 DEFECT IN GAAS - INTRODUCTION
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[28] DEFECT PAIRS AND CLUSTERS RELATED TO THE EL2 CENTER IN GAAS
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[29] NONCREATION OF THE EL2 DEFECT IN NEUTRON-IRRADIATED GAAS
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[30] Effects of copper diffusion on the native defect EL2 in GaAs
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