ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF INASSBP SOLID-SOLUTIONS

An investigation was made of electrical and photoelectric properties of films of InAs1-x-ySbyPx solid solutions grown by the method of liquid phase epitaxy with compositions in the range 0.03 less-than-or-equal-to x less-than-or-equal-to 0.26. The photoconductivity spectra indicated that the band gap E(g) measured at T = 77 K increased from 0.41 to 0.52 eV on increase in x from 0.03 to 0.26. The temperature dependence of the Hall coefficient of undoped films revealed the presence of two donor levels with activation energies E(D1) almost-equal-to 0.002 eV and E(D2) almost-equal-to 0.03 eV. Doping with tellurium and tin made it possible to prepare a material with a wide range of carrier densities from 10(16) to 10(19) cm-3. The concentrations of the Te and Sn atoms were determined in the solid and liquid phases and the segregation coefficients of these coefficients were found: C(Te) = 0.6-0.96 and C(Sn) almost-equal-to 0.01.