PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

被引：58
作者：
PARK, RM
MAR, HA
SALANSKY, NM
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 02期
关键词：
D O I：
10.1063/1.336212
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1047 / 1049
页数：3
相关论文
共 11 条
[1]   THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS [J].
BHARGAVA, RN .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :15-26
[2]   IONIZATION-ENERGY OF THE SHALLOW NITROGEN ACCEPTOR IN ZINC SELENIDE [J].
DEAN, PJ ;
STUTIUS, W ;
NEUMARK, GF ;
FITZPATRICK, BJ ;
BHARGAVA, RN .
PHYSICAL REVIEW B, 1983, 27 (04) :2419-2428
[3]   DONOR BOUND-EXCITON EXCITED-STATES IN ZINC SELENIDE [J].
DEAN, PJ ;
HERBERT, DC ;
WERKHOVEN, CJ ;
FITZPATRICK, BJ ;
BHARGAVA, RN .
PHYSICAL REVIEW B, 1981, 23 (10) :4888-4901
[4]   SPECTROSCOPIC STUDIES OF ZNSE GROWN BY LIQUID-PHASE EPITAXY [J].
FITZPATRICK, BJ ;
WERKHOVEN, CJ ;
MCGEE, TF ;
HARNACK, PM ;
HERKO, SP ;
BHARGAVA, RN ;
DEAN, PJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (04) :440-444
[5]   LI DOPED ZNSE AND PROBLEMS OF P-TYPE CONDUCTION [J].
NEUMARK, GF ;
HERKO, SP .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :189-195
[6]   MOLECULAR-BEAM EPITAXY GROWTH OF ZNSE ON (100)GAAS BY COMPOUND SOURCE AND SEPARATE SOURCE EVAPORATION - A COMPARATIVE-STUDY [J].
PARK, RM ;
MAR, HA ;
SALANSKY, NM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :676-680
[7]   DOMINANT INTRINSIC-EXCITON RELATED LUMINESCENCE FROM ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J].
PARK, RM ;
MAR, HA ;
SALANSKY, NM .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :386-387
[8]   GROWTH AND DOPING OF ZNSE AND ZNSXSE1-X BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J].
STUTIUS, W .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :1-9
[9]   SHALLOW N-ACCEPTOR IN N+-IMPLANTED ZNSE [J].
WU, ZL ;
MERZ, JL ;
WERKHOVEN, CJ ;
FITZPATRICK, BJ ;
BHARGAVA, RN .
APPLIED PHYSICS LETTERS, 1982, 40 (04) :345-346
[10]   ELECTRICAL AND PHOTO-LUMINESCENCE PROPERTIES OF ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY - SUBSTRATE-TEMPERATURE EFFECT [J].
YAO, T ;
OGURA, M ;
MATSUOKA, S ;
MORISHITA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03) :L144-L146
12