LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS

被引：59

作者：

AOYAGI, Y ^{[1
]}

MASUDA, S ^{[1
]}

NAMBA, S ^{[1
]}

DOI, A ^{[1
]}

机构：

[1] INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 02期

关键词：

D O I：

10.1063/1.96208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：95 / 96

页数：2

共 50 条

[1] IDEAL CRYSTAL-GROWTH FROM KINK SITES ON A GAAS VICINAL SURFACE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
FUKUI, T
SAITO, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (05): : L731 - L732
[2] METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF ZNTE ON GAAS
TOMPA, GS
SUMMERS, CJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 903 - 906
[3] GROWTH OF INSB ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BIEFELD, RM
HEBNER, GA
JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) : 272 - 278
[4] PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS
HUELSMAN, AD
REIF, R
FONSTAD, CG
APPLIED PHYSICS LETTERS, 1987, 50 (04) : 206 - 208
[5] THE GROWTH OF GAAS ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C484 - C484
[6] USE OF TERTIARYBUTYLARSINE IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS
LUM, RM
KLINGERT, JK
LAMONT, MG
APPLIED PHYSICS LETTERS, 1987, 50 (05) : 284 - 286
[7] DIAMOND CRYSTAL-GROWTH BY PLASMA CHEMICAL VAPOR-DEPOSITION
CHANG, CP
FLAMM, DL
IBBOTSON, DE
MUCHA, JA
JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1744 - 1748
[8] CRYSTAL-GROWTH OF TITANIUM NITRIDE BY CHEMICAL VAPOR-DEPOSITION
KATO, A
TAMARI, N
JOURNAL OF CRYSTAL GROWTH, 1975, 29 (01) : 55 - 60
[9] CRYSTAL-GROWTH OF IRON SILICIDE BY CHEMICAL VAPOR-DEPOSITION
MOTOJIMA, S
ITO, E
HATTORI, T
JOURNAL OF MATERIALS SCIENCE LETTERS, 1989, 8 (08) : 912 - 914
[10] CRYSTAL-GROWTH OF ZIRCONIUM CARBIDE BY CHEMICAL VAPOR-DEPOSITION
TAMARI, N
KATO, A
NIPPON KAGAKU KAISHI, 1977, (05) : 650 - 655

← 1 2 3 4 5 →