PLASMA CHARACTERIZATION FOR A DIVERGENT FIELD ELECTRON-CYCLOTRON RESONANCE SOURCE

被引:57
作者
FORSTER, J
HOLBER, W
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期
关键词
D O I
10.1116/1.575817
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:899 / 902
页数:4
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共 16 条
[11]   A PARAMETRIC STUDY OF THE ETCHING OF SILICON IN SF6 MICROWAVE MULTIPOLAR PLASMAS - INTERPRETATION OF ETCHING MECHANISMS [J].
PETIT, B ;
PELLETIER, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (06) :825-834
[12]  
STIX TH, 1962, THEORY PLASMA WAVES
[13]   RADIO-FREQUENCY BIASED MICROWAVE PLASMA-ETCHING TECHNIQUE - A METHOD TO INCREASE SIO2 ETCH RATE [J].
SUZUKI, K ;
NINOMIYA, K ;
NISHIMATSU, S ;
OKUDAIRA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1025-1034
[14]   MICROWAVE PLASMA ETCHING [J].
SUZUKI, K ;
OKUDAIRA, S ;
SAKUDO, N ;
KANOMATA, I .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (11) :1979-1984
[15]   ROLES OF IONS AND NEUTRAL ACTIVE SPECIES IN MICROWAVE PLASMA-ETCHING [J].
SUZUKI, K ;
OKUDAIRA, S ;
KANOMATA, I .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :1024-1028
[16]   VERY HIGH-CURRENT ECR ION-SOURCE FOR AN OXYGEN ION IMPLANTER [J].
TORII, Y ;
SHIMADA, M ;
WATANABE, I .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :178-181