SHALLOW SURFACE DONOR IMPURITY STATES OF GE, SI AND GAP

被引：0

作者：

PEI, JH

DAI, CM

CHUU, DS

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTROOPT,HSINCHU,TAIWAN

[2] NATL CHIAO TUNG UNIV,DEPT ELECTROPHYS,HSINCHU,TAIWAN

来源：

PHYSICA B | 1990年 / 167卷 / 01期

关键词：

D O I：

10.1016/0921-4526(90)90100-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The lower lying surface impurity states of anisotropic semiconductors Ge, Si and GaP are studied by an approximation method in the spirit of the perturbative-variational technique. The ground and excited states binding energies of a donor at the Si-SiO2 interface in the limit of vanishing depletion field are also studied. © 1990.

引用

页码：40 / 44

页数：5

共 14 条

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