1/F NOISE AND THE FIELD-EFFECT IN GATED RESISTORS

被引：6
作者：
GARFUNKEL, GA
WEISSMAN, MB
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期
关键词：
D O I：
10.1063/1.334755
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：634 / 636
页数：3
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